Design, fabrication and characterization of dual-channel real space transfer transistor
Design、transfer、real space、negative resistance、resistance characteristics、conventional、structure、changing、region、power、paper、level、GaAs
4
TN1(真空电子技术)
2009-08-13(万方平台首次上网日期,不代表论文的发表时间)
共5页
234-238