10.3969/j.issn.1007-4252.2009.06.015
Electrical properties of HfTiO Gate Dielectric Ge MOS capacitors with wet-No surface pretreatment
MOS
15
TM271(电工材料)
The work is financially supposed by the National Natural Science Foundation of ChinaGrant no.60776016
2010-03-23(万方平台首次上网日期,不代表论文的发表时间)
共4页
599-602