在双镶嵌铜互联中O.13微米器件生成用的基于PVD和ALD阻挡层的先进技术

摘要：

@@ 1. Introduction
The requirement of minimal bottom coverageand thick sidewall coverage for PVD-based films forlow via resistance and improved stress migration isnot easy to achieve with traditional depositionmethods. Modern I-PVD techniques give high bot-tom coverage, due to the ionized component of thedeposition flux. Sidewall coverage tends to be low,which is mainly due to off-normal deposition fluxand a less than unity sticking coefficient.

机标关键词：阻挡层、先进技术、器件生成、铜互联

所属期刊栏目：28

分类号：TN3(半导体技术)

在线出版日期：2004-01-08（万方平台首次上网日期，不代表论文的发表时间）

页数：共5页

页码：42-46